Modulation characteristics of 1.3 μm buried-stripe InGaAsP laser up to 2 Gbit/s data rates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19790428?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Kano, H., and Sugiyama, K.: 1.3 μm cw operation of GaInAsP/InP DH lasers made by meltback method, (to be published)
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of coupling efficiency between a 0.82 μm wavelength laser diode and a VAD single-mode fibre by conical microlenses;Optics & Laser Technology;1996-07
2. Experimental investigation on coupling efficiency between semiconductor laser diodes and single-mode fibres by an etching technique;Optical and Quantum Electronics;1988-11
3. Microlens for coupling a semiconductor laser to a single-mode fiber;Optics Letters;1986-08-01
4. Chapter 2 High-Frequency Current Modulation of Semiconductor Injection Lasers;Lightwave Communications Technology - Part B Semiconductor Injection Lasers, I;1985
5. Evidence for Auger and free‐carrier losses in GaInAsP/InP lasers: Spectroscopy of a short wavelength emission;Applied Physics Letters;1982-11-15
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