Author:
Ting W.,Lo G.Q.,Kwong D.L.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Cited by
3 articles.
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1. Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation;Microelectronics Reliability;2003-05
2. Improved wafer charge neutralization system in varian high current implanters;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
3. Improvement of spacer particle induced reliability failures;IEEE International Integrated Reliability Workshop Final Report, 2004