Author:
Lahiji G.R.,Hamilton B.,Peaker A.R.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference3 articles.
1. Peaker, A.R., and Sidebotham, E.C.: ‘Dislocation related deep levels in Si: EMIS data review RN17836’, Properties of Silicon, (IEE, London 1988), p. 221–224
2. Yang, K.H.: ‘An etch for delineation of defects in silicon’, J. Electrochem. Soc., 1984),131, p. 1140–1145
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献