6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC
Author:
Affiliation:
1. School of Electrical Engineering and Computer Science and INMCSeoul National UniversitySeoul151‐742Republic of Korea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.3727
Reference8 articles.
1. A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating
2. A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
3. Over 10 W C–Ku band GaN MMIC non‐uniform distributed power amplifier with broadband couplers;Masuda S.;IEEE MTT‐S Int. Microw. Symp. Dig.,2010
4. Wideband, high‐efficiency GaN power amplifiers utilizing a non‐uniform distributed topology;Gassmann J.;IEEE MTT‐S Int. Microw. Symp. Dig.,2008
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1. A 6-18-GHz GaN High Power Amplifier with Excellent Gain Flatness;2023 International Symposium on Electrical and Electronics Engineering (ISEE);2023-10-19
2. A 6-18GHz 10W GaN Balanced Power Amplifier MMIC;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14
3. High-Performance RF Power Amplifier Module Using Optimum Chip-Level Packaging Structure;IEEE Transactions on Industrial Electronics;2022-06
4. Novel Power Combining for a 5-18 GHz, 10-21 W, Non-Uniform Distributed Power Amplifier;2021 IEEE Asia-Pacific Microwave Conference (APMC);2021-11-28
5. A State-of-the Art Review on Distributed Amplifiers;Wireless Personal Communications;2020-11-23
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