Edge illuminated SiGe heterojunction phototransistor for RoF applications
Author:
Affiliation:
1. High Frequency and Photonic GroupUniversité Paris‐EST, ESYCOM (EA2552)ESIEE‐Paris – UPEM – Le Cnam93162Noisy_le_GrandFrance
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2448
Reference10 articles.
1. A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications
2. Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers;Pei Z.;IEEE Electron Device Lett.,2004
3. Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS
4. Design of an optically frequency or phase-controlled oscillator for hybrid fiber-radio LAN at 5.2 GHz
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