Impact of 0.25 [micro sign]m dual gate oxide thickness CMOS process on flicker noise performance of multifingered deep-submicron MOS devices-Reference-Cited by-同舟云学术

Impact of 0.25 [micro sign]m dual gate oxide thickness CMOS process on flicker noise performance of multifingered deep-submicron MOS devices

Published:2001 Issue:6 Volume:148 Page:312
ISSN:1350-2409
Container-title:IEE Proceedings - Circuits, Devices and Systems
language:en
Short-container-title:IEE Proc., Circuits Devices Syst.

Author:

Chew K.W.,Yeo K.S.,Chu S.-F.,Wang Y.M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20010626?crawler=true&mimetype=application/pdf

Reference29 articles.

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3. A fully integrated CMOS DCS-1800 frequency synthesizer

4. van der Ziel, A.: ‘Noise in solid-state devices and circuits’, (Wiley New York 1986)

5. McWhorter, A.L.: ‘1/f noise and germanium surface properties’, Semiconductor surface physics, (Philadelphia: University of Pennsylvania Press 1957), p. 207

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