Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures-Reference-Cited by-同舟云学术

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Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures

Published:2014-10 Issue:21 Volume:50 Page:1545-1547
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Geum Dae‐Myeong¹,Shin Seungheon²,Park Min‐Su³,Jang Jae‐Hyung¹

Affiliation:

1. School of Information and CommunicationsGwangju Institute of Science and Technology1 Oryong‐dong, Buk‐guGwangju500‐712Republic of Korea

2. Department of Material Sciences and EngineeringYonsei UniversitySeoul120‐749Republic of Korea

3. Center for Opto‐electronic Convergence SystemsKorea Institute of Science and Technology (KIST)Hwarang‐ro 14‐gil 5, Seongbuk‐guSeoul136‐791Republic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.2061

Reference13 articles.

1. Barrier-Layer Scaling of InAlN/GaN HEMTs

2. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT;Wang C.;Nanoscale Res. Lett.,2012

3. Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma

4. Ohmic contact formation mechanism of Ta∕Al∕Mo∕Au and Ti∕Al∕Mo∕Au metallizations on AlGaN∕GaN HEMTs

5. Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment

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