The Design Considerations of Stray Inductance for Power Modules with Parallel-Connected Igbt Chips for a Digital Gate Driver Control

Author:

Lou Zaiqi,Mamee Thatree,Hata Katsuhiro,Takamiya Makoto,Nishizawa Shin-ichi,Saito Wataru

Publisher

Elsevier BV

Reference23 articles.

1. Comparison of IGBT and SiC Inverter Loss for 400V and 800V DC Bus Electric Vehicle Drivetrains;A Allca-Pekarovic;IEEE Energy Conversion Congress and Exposition (ECCE),2020

2. High-power SiC Module in Wind Turbine Full Scale Frequency Converter: Efficiency Comparison with IGBT-based Converter;J Loncarski;2022 Second International Conference on Sustainable Mobility Applications, Renewables and Technology (SMART),2022

3. High-Voltage Hybrid IGBT Power Modules for Miniaturization of Rolling Stock Traction Inverters;X Li;IEEE Transactions on Industrial Electronics,2022

4. Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules;R Wu;2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia),2015

5. Analysis and measurement of chip current imbalances caused by the structure of bus bars in an IGBT module;T Ohi;Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting,1999

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