Bandgap tuning and analysis of the electronic structure of the Cu2NiXS4 (X=Sn, Ge, Si) system: mBJ accuracy with DFT expense-Reference-Cited by-同舟云学术

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Bandgap tuning and analysis of the electronic structure of the Cu2NiXS4 (X=Sn, Ge, Si) system: mBJ accuracy with DFT expense

Published:2023 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Nematov Dilshod

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference61 articles.

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4. Progress and perspectives of thin film kesterite photovoltaic technology: a critical review;G Sergio;Adv. Mater,2019

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