Enhanced Resistive Switching Performance of Tio2 Based Rram Device with Graphene Oxide Inserting Layer

Author:

Hu Lifang,Mu Wenjin,Xiao Ming,Meng Qingsen

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference43 articles.

1. Annealing effect on the bipolar resistive switching memory of NiZn ferrite films;L Wu;Journal of Alloys and Compounds,2019

2. Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor;F Gul;Superlattices and Microstructures,2017

3. Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption;J Zhao;Applied Physics Letters,2021

4. Investigation of physically transient resistive switching memory based on GeO 2 thin films;J Feng;Applied Physics Letters,2020

5. Resistive switching memory effects in p-type hydrogen-treated CuO nanowire;C.-H Huang;Applied Physics Letters,2020

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