Energy-Band-Structure Calculation by Below-Band-Gap Spectrophotometry in Thin Layers of Non-Crystalline Semiconductors: A Case Study of Unhydrogenated A-Si-Reference-Cited by-同舟云学术

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Energy-Band-Structure Calculation by Below-Band-Gap Spectrophotometry in Thin Layers of Non-Crystalline Semiconductors: A Case Study of Unhydrogenated A-Si

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Ballester M.,Márquez A.P.,Garcia Vazquez C.,Díaz J.M.,Blanco E.,Minkov D.,Fernández-Ruano S.M.,Willomitzer F.,Cossairt O.,Márquez E.

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference51 articles.

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2. Determination of the thickness and optical constants of amorphous silicon;R Swanepoel;J Phys E: Sci Instrum,1983

3. Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films;R Swanepoel;J. Phys. E: Sci. Instrum,1984

4. Calculation of the thickness and optical constants of amorphous arsenic sulphide films from their transmission spectra;E Marquez;J. Phys. D: Appl. Phys,1992

5. Optical characterization of wedge-shaped thin films of amorphous arsenic trisulphide based only on their shrunk transmission spectra;E M�rquez;Thin Solid Films,1995

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