Effect of Subsurface Damages in the Seed Crystal on the Crystal Quality of 4h-Sic Single Crystals Grown by the Pvt Technology-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of Subsurface Damages in the Seed Crystal on the Crystal Quality of 4h-Sic Single Crystals Grown by the Pvt Technology

Published:2023 Issue: Volume: Page:
ISSN:
Container-title:
language:
Short-container-title:

Author:

Li Guofeng,Hang Wei,Chen Hongyu,Wang Rong,Pi Xiaodong,Yang Deren,Yuan Julong

Publisher

Elsevier BV

Reference16 articles.

1. Technological breakthroughs in growth control of silicon carbide for high power electronic devices;H Matsunami;Japanese Journal of Applied Physics,2004

2. Defect engineering in sic technology for high-voltage power devices;T Kimoto;Applied Physics Express,2020

3. Investigation of growth processes of ingots of silicon carbide single crystals;Y M Tairov;Journal of Crystal Growth,1978

4. Wire saw slicing and its application in silicon carbide wafers processing;J Zhang;Journal of Synthetic Crystals,2023

5. Characterization of scraper-shaped defects on 4h-sic epitaxial film surfaces;H Sako;Japanese Journal of Applied Physics,2014

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP