Author:
Kwon So-Yeon,Ko Woon-San,Kim Ki-Nam,Byun Jun-Ho,Lee Do-Yeon,Lee Hi-Deok,Lee Ga-Won
Reference38 articles.
1. Metal–Oxide RRAM
2. Leakage current-forming voltage relation and oxygen gettering in HfO x RRAM devices;K G Young-Fisher;IEEE electron device letters,2013
3. Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films;S.-Y Wang;Applied Physics Letters,2009
4. The role of Ti capping layer in HfO x-based RRAM devices;Z Fang;IEEE Electron Device Letters,2014
5. Self-compliance and high performance Pt/HfOx/Ti RRAM achieved through annealing;L Wu;Nanomaterials,2020