Theoretical Investigation and Optimisation of Strain Relief Layers for Highly Efficient and Spectrally Pure Green-Led

Author:

Singh Chandra Prakash,GHOSH KANKAT

Publisher

Elsevier BV

Reference45 articles.

1. Ultra-Broadband Green-Emitting Phosphors without Cyan Gap Based on Double-Heterovalent Substitution Strategy for Full-Spectrum WLED Lighting;Shuai Huang;Laser & Photonics Reviews,2022

2. Improving the Modulation Bandwidth of GaN-Based Light-Emitting Diodes for High-Speed Visible Light Communication: Countermeasures and Challenges;Rongqiao Wan;Advanced Photonics Research,2021

3. Growth modification via indium surfactant for InGaN/GaN green LED;M Ikram Taib;Semiconductor Science and Technology,2023

4. Green gap in GaN-based light-emitting diodes: in perspective;Muhammad Usman;Critical Reviews in Solid State and Materials Sciences,2021

5. Formation of atype dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures;J Moneta;Journal of Applied Physics,2023

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