First-Principles Investigation of Cu/Ti-Tm/Si (Tm=W, Ru) Interfaces: Role of Ti-Tm Binary Alloys as Diffusion Barrier Layers

Author:

Feng Hai-Di,Xu Yan-Ting,Zhao Qi,Wen MinG,Zhao Zong-Yan

Publisher

Elsevier BV

Reference26 articles.

1. Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects;H.-J Lee;Journal of Alloys and Compounds,2016

2. Impact of contact and local interconnect scaling on logic performance;S Datta;2014 Symposium on VLSI Technology,2014

3. Recent progress of integrated circuits and optoelectronic chips;Y Hao;Science China Information Sciences,2021

4. Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects;K.-C Hsu;Applied Surface Science,2012

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