A 28-Nm 9t Sram-Based Cim Macro with Capacitance Weighting Module and Redundant Array-Assisted Adc

Author:

Lin Zhiting,Yu Runru,Huo Da,Zhu Qingchuan,Long Miao,Qin Yongqi,Liu Yanchun,Zhao Yue,Chen Lintao,Wang Simin,Wang Ting,Xing Yousheng,Wen Zeshi,Liu Yu,Li Xin,Dai Chenghu,Zhao Qiang,Peng Chunyu,Wu Xiulong

Publisher

Elsevier BV

Reference26 articles.

1. A negative capacitance FET based energy efficient 6T SRAM computing-in-memory (CiM) cell design for deep neural networks;V Birudu;Microelectron. J,2023

2. A 65 nm 73 kb SRAM-based computing-in-memory macro with dynamic-sparsity controlling;X Qiao;IEEE Transactions on Circuits and Systems II: Express Briefs,2022

3. An energy-efficient 10T SRAM in-memory computing macro for artificial intelligence edge processor;A K Rajput;Memories -Materials, Devices, Circuits and Systems,2023

4. In-memory transposable multibit multiplication based on diagonal symmetry weight block;Z Tong;IEEE Trans. Very Large Scale Integr. Syst,2023

5. A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications;K Xiao;Microelectron. J,2022

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