Etch of Nano-Tsv with Smooth Sidewall and Excellent Selection Ratio for Backside Power Delivery Network

Author:

Wang Yang,Liu Ziyu,Sun Yabin,Chen Lin,Sun Qingqing

Publisher

Elsevier BV

Reference18 articles.

1. Buried Power Rails and Nano-Scale TSV: Technology Boosters for Backside Power Delivery Network and 3D Heterogeneous Integration;A Jourdain;2022 IEEE 72nd Electronic Components and Technology Conference (ECTC),2022

2. Power Delivery Network (PDN) Modeling for Backside-PDN Configurations With Buried Power Rails and uTSVs;M O Hossen;IEEE Transactions on Electron Devices,2020

3. A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes;S S T Nibhanupudi;IEEE Transactions on Electron Devices,2022

4. Power, Performance, Area and Thermal Analysis of 2D and 3D ICs at A14 Node Designed with Back-side Power Delivery Network;R Chen;2022 International Electron Devices Meeting (IEDM),2022

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