Effect of NO2 and NH3 on the resistive switching behavior of W/Cu x O/Cu devices

Author:

Nyenke ChinweORCID,Dong Lixin

Abstract

Abstract Cu x O-based devices were fabricated and investigated for the effect of nitrogen dioxide (NO2) and ammonia (NH3) on resistive switching behavior. Bottom copper (Cu) electrodes, copper-rich copper oxide (Cu x O) switching layers, and top tungsten (W) electrodes were sputtered onto two separate substrates to achieve two sets of memristors. Groups of holes ranging in diameter from 300 nm to 2 µm were wet etched into the top memristor layer to expose the Cu x O surface. At room temperatures, one substrate was subjected to 20 ppm of NO2 gas then a second substrate was subjected to 100 ppm of NH3 to measure the effect on memristance. For the first substrate, low and high resistance states demonstrated decreased values while the overall hysteresis gap collapsed after 10 min of exposure to NO2. The second substrate also showed decreases in resistance states but with a widening of the hysteresis gap after exposure to NH3 for 20 min. Recovery of both devices were visible at 25 and 30 min, respectively.

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Physical mechanisms underpinning conductometric gas sensing properties of metal oxide nanostructures;Advances in Physics: X;2022-04-12

2. Temperature driven memristive switching in Al/TiO2/Al devices;2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO);2020-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3