Electrical characterization of rapidly annealed Ni and Pd/n-InP Schottky diodes
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Ni‐InP reaction: Formation of amorphous and crystalline ternary phases
2. Solid phase equilibria in the InPPd system
3. Phase equilibria in the Pt‐In‐P system
4. Interfacial reactions in Pt/InP contacts
5. Phase formation in the Pd‐InP system
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2. Ru/Ti Schottky Contacts on N-type In-P (100): Temperature Dependence of Current-Voltage (I-V) Characteristics;Procedia Materials Science;2015
3. The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs;Materials Research Bulletin;2014-05
4. Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InP;physica status solidi (a);2011-10-05
5. Electrical and structural properties of Pd/V/n-type InP (111) Schottky structure as a function of annealing temperature;Surface and Interface Analysis;2011-05-06
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