New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case-Reference-Cited by-同舟云学术

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New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case

Published:2013-07-25 Issue:10 Volume:28 Page:105001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Xu Chi,Beeler Richard T,Jiang Liying,Grzybowski Gordon,Chizmeshya Andrew V G,Menéndez José,Kouvetakis John

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=10/a=105001/pdf

Reference25 articles.

1. Ge-on-Si laser operating at room temperature

2. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

3. High-performance Ge-on-Si photodetectors

4. Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics;Journal of Applied Physics;2024-03-22

2. Epitaxial growth of high-quality Ge layers on Si with Ge₂H₆ under UHV-CVD conditions;Semiconductor Science and Technology;2023-12-20

3. Electrodeposition of crystalline germanium thin films by the electrochemical liquid-liquid-solid method;Journal of Electroanalytical Chemistry;2023-11

4. Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE;Journal of Crystal Growth;2022-06

5. Gas source molecular epitaxy of Ge1−ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides;Journal of Vacuum Science & Technology A;2021-12

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