Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors-Reference-Cited by-同舟云学术

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Bias–stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors

Published:2013-08-16 Issue:10 Volume:28 Page:105014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Nguyen Cam Phu Thi,Trinh Thanh Thuy,Dao Vinh Ai,Raja Jayapal,Jang Kyungsoo,Le Tuan Anh Huy,Iftiquar S M,Yi Junsin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=10/a=105014/pdf

Reference19 articles.

1. Electrical and optical properties of In–Zn–Sn–O thin film deposited on polymer substrates through facing targets co-sputtering system

2. The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio

3. Fabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputtering

4. Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System

5. Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

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1. High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas;ACS Applied Materials & Interfaces;2024-06-06

2. a-InGaZnO Thin-Film Transistors With Novel Atomic Layer-Deposited HfO₂ Gate Insulator Using Two Types of Reactant Gases;IEEE Transactions on Electron Devices;2023-01

3. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers;Micromachines;2021-12-12

4. Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor;Semiconductor Science and Technology;2021-02-26

5. Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors;Journal of Alloys and Compounds;2019-09

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