A theoretical study of the photoluminescence energy shifts of interdiffused quantum wells
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=11/a=004/pdf
Reference8 articles.
1. Interdiffusion between GaAs and AlAs
2. X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)mmultilayers
3. An optical study of encapsulant thickness-controlled interdiffusion of asymmetric GaAs quantum well material
4. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures
5. Impurity-induced disordering in III?V multi-quantum wells and superlattices
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic structure of quantum wells embedded in short-period superlattices with graded interfaces;Semiconductor Science and Technology;2000-08-30
2. Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells;Thin Solid Films;2000-03
3. Infrared Absorption of Multiple Quantum Wells: Bound to Continuum Transitions;Acta Physica Polonica A;1998-09
4. Electronic states in diffused quantum wells;Journal of Applied Physics;1997-10-15
5. Numerical solution to the general one-dimensional diffusion equation in semiconductor heterostructures;physica status solidi (b);1996-09-01
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