Titanium mononitride as an antireflection layer on aluminium metallization for submicron photolithographic patterning
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=12/a=013/pdf
Reference6 articles.
1. Improved Bake Latitude Organic Anti-Reflective Coatings for High Resolution Metallisation Lithography
2. Two Anti-Reflective Coatings For Use Over Highly Reflective Topography
3. Thin Silicon Films Used As Antireflection Coatings For Metal Coated Substrates
4. Reflectivity reduction by oxygen plasma treatment of capped metallization layer
5. Properties and microelectronic applications of thin films of refractory metal nitrides
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1. Dry etching characteristics of TiN film using Ar/CHF[sub 3], Ar/Cl[sub 2], and Ar/BCl[sub 3] gas chemistries in an inductively coupled plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
2. Characterization and reduction of highly localized substrate contamination defects in metal patterning;SPIE Proceedings;2002-07-01
3. Optimizing a DUV positive resist for metal layers;SPIE Proceedings;1999-06-11
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