Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate-Reference-Cited by-同舟云学术

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Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate

Published:2006-11-30 Issue:2 Volume:22 Page:35-42
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hsu M K,Chen H R,Chiu S Y,Chen W T,Liu W C,Tasi J H,Lour W S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The state-of-the-art of GaAs and InP power devices and amplifiers

2. Numerical analysis of device performance of metamorphic In/sub y/Al/sub 1-y/As/In/sub x/Ga/sub 1-x/As (0.3≤x≤0.6) HEMTs on GaAs substrate

3. High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates

4. Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's

5. Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

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1. Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals;Semiconductors;2021-07

2. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

3. InAlAs/InGaAs/GaAs metamorphic high-electron mobility transistors with selective and nonselective recess gate processes;Microelectronic Engineering;2019-09

4. Effects of surface passivation and temperature on AlGaAs/InGaAs high-electron mobility transistor;Microelectronic Engineering;2019-06

5. On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET);Solid-State Electronics;2013-01

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