Independent determination of In and N concentrations in GaInNAs alloys-Reference-Cited by-同舟云学术

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Independent determination of In and N concentrations in GaInNAs alloys

Published:2009-09-18 Issue:10 Volume:24 Page:105016
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lu W,Lim J J,Bull S,Andrianov A V,Staddon C,Foxon C T,Sadeghi M,Wang S M,Larsson A,Larkins E C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. 1.2 [micro sign]m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

2. Band Anticrossing in GaInNAs Alloys

3. Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer

4. High-quality 1.3 [micro sign]m GaInNAs single quantum well lasers grown by MBE

5. Uncooled 2.5 Gb/s operation of 1.3 μm GaInNAs DQW lasers over a wide temperature range

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of composition of non-homogeneous GaInNAs layers;Journal of Crystal Growth;2016-01

2. Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap;Materials Science-Poland;2013-10

3. Nitrogen-electronegativity-induced bowing character in ternary zincblende Ga1−xInxN alloys;Journal of Alloys and Compounds;2010-08

4. A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source;Journal of Crystal Growth;2010-03

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