Device fabrication and transport measurements of FinFETs built with28Si SOI wafers toward donor qubits in silicon-Reference-Cited by-同舟云学术

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Device fabrication and transport measurements of FinFETs built with28Si SOI wafers toward donor qubits in silicon

Published:2009-09-22 Issue:10 Volume:24 Page:105022
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lo Cheuk Chi,Persaud Arun,Dhuey Scott,Olynick Deirdre,Borondics Ferenc,Martin Michael C,Bechtel Hans A,Bokor Jeffrey,Schenkel Thomas

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. A silicon-based nuclear spin quantum computer

2. Electron spin relaxation times of phosphorus donors in silicon

3. Solid-state quantum memory using the 31P nuclear spin

4. Scanning probe microscopy for silicon device fabrication

5. Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors

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3. Quantum electronics and optics at the interface of solid neon and superfluid helium;Quantum Science and Technology;2020-05-11

4. 99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits;Journal of Crystal Growth;2019-03

5. Impact device processing and scaling on RTS;Random Telegraph Signals in Semiconductor Devices;2017

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