GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates-Reference-Cited by-同舟云学术

GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates

Published:2011-05-10 Issue:8 Volume:26 Page:085008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sun Yongjian,Trieu Simeon,Yu Tongjun,Chen Zhizhong,Qi Shengli,Tian Pengfei,Deng Junjing,Jin Xiaoming,Zhang Guoyi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

2. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

3. 33 μm free standing thick film vertical structure LED made by laser lift-off

4. Comparison of optical and structural quality of GaIn(N)As analog and digital quantum wells grown by molecular beam epitaxy

5. Improved Light Output of Photonic Crystal Light-Emitting Diode Fabricated by Anodized Aluminum Oxide Nano-Patterns

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