The effect of gate length variation on InAlGaN/GaN HFET device characteristics-Reference-Cited by-同舟云学术

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The effect of gate length variation on InAlGaN/GaN HFET device characteristics

Published:2012-01-25 Issue:3 Volume:27 Page:035009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ketteniss N,Behmenburg H,Lecourt F,Defrance N,Hoel V,De Jaeger J C,Heuken M,Kalisch H,Vescan A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$

2. Multibit Programmable Flash Memory Realized on Vertical Si Nanowire Channel

3. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

4. The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors

5. Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition;Chinese Physics B;2019-01

2. Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs;IEEE Transactions on Electron Devices;2018-09

3. GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer;physica status solidi (a);2016-02-16

4. Comparison of Recessed Gate-Head Structures on Normally-Off AlGaN/GaN High-Electron-Mobility Transistor Performance;Journal of Nanoscience and Nanotechnology;2014-11-01

5. Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate;Journal of Physics D: Applied Physics;2014-03-11

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