Current- and capacitance-voltage characteristics of Cd/p-GaTe Schottky barrier diodes under hydrostatic pressure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference50 articles.
1. Optical and Electrical Properties
2. Single crystalline GaSe/WSe2heterointerfaces grown by van der Waals epitaxy. I. Growth conditions
3. Growth and characterization of Ga2Te3 films by metalorganic molecular beam epitaxy
4. Van der Waals epitaxy for highly lattice-mismatched systems
5. Schottky barriers on layered semiconductors: a comparison between van der Waals and non van der Waals faces
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