Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors-Reference-Cited by-同舟云学术

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Characterization of fast interface states in nitrogen- and phosphorus-treated 4H-SiC MOS capacitors

Published:2015-06-16 Issue:7 Volume:30 Page:075011
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kao W C,Goryll M,Marinella M,Kaplar R J,Jiao C,Dhar S,Cooper J A,Schroder D K

Funder

U.S. Army Research Laboratory

II-VI Foundation Block-Gift Program

U.S. National Science Foundation

DOE Office of Electricity’s Energy Storage Program

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=7/a=075011/pdf

Reference17 articles.

1. Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors

2. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

3. Interface passivation of Silicon Dioxide layers on Silicon Carbide

4. The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices

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1. DC current–voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ;Scientific Reports;2024-06-05

2. Exploring the border traps near the SiO₂-SiC interface using conductance measurements;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS;Nanomaterials;2024-01-15

4. Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors;Journal of Applied Physics;2023-09-25

5. Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation;AIP Advances;2023-05-01

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