Recombination-generation behaviour of decorated defects in silicon-Reference-Cited by-同舟云学术

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Recombination-generation behaviour of decorated defects in silicon

Published:1992-01-01 Issue:1A Volume:7 Page:A263-A268
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Berg A,Brough I,Evans J H,Lorimer G,Peaker A R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=1A/a=050/pdf

Reference27 articles.

1. Characterization of silver‐related deep levels in silicon

2. Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview

3. Mechanism of Diffusion of Copper in Germanium

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