Surface scattering velocities in III-nitride quantum well laser structures via the emission of hybrid phonons
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
2. Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction
3. The growth and optical properties of large, high-quality AlN single crystals
4. Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
5. In rich In1−x Ga x N: Composition dependence of longitudinal optical phonon energy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Carrier Diffusion in GaN : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion;Physical Review Applied;2022-02-07
2. Linear and nonlinear optical absorptions in III–V nitrides quantum well with semi-parabolic confining potential;Indian Journal of Physics;2019-03-07
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