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The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

  • Published:2015-08-11 Issue:10 Volume:30 Page:105004
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Nguyen Ngoc,McCall Briana,Alston Robert,Collis Ward,Iyer Shanthi

Funder

Army Research Office

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the valence state of tin in ZnSnOx thin-film transistors;Journal of Materials Science: Materials in Electronics;2022-10-14

2. Coupled ZnO–SnO2 Nanocomposite for Efficiency Enhancement of ZnO–SnO2/p-Si Heterojunction Solar Cell;IEEE Transactions on Electron Devices;2021-02

3. YAP confers resistance to vandetanib in medullary thyroid cancer;Biochemistry and Cell Biology;2020-06

4. Preparation, properties and electronic structure of SnO2;Single Crystals of Electronic Materials;2019

5. Influence of different conditions on the electrical performance of amorphous InGaZnO thin-film transistors with HfO2/SiNx stacked dielectrics;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
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