Microstructure and cathodoluminescence of MBE-grown (001) InxGa1-xP/GaAs strained-layer heterostructures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=4/a=004/pdf
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1. Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
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1. Electron Microscopy of Cracks in InxGa1-xAs/GaAs(001) Multi-Quantum Wells;Acta Physica Polonica A;2015-03
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3. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells;Journal of Applied Physics;2011-01
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5. Cathodoluminescence in transmission electron microscopy;Journal of Microscopy;2006-10
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