In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces-Reference-Cited by-同舟云学术

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In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Published:2013-10-18 Issue:11 Volume:28 Page:115013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Takagaki Y,Jenichen B,Jahn U,Ramsteiner M,Biermann K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=11/a=115013/pdf

Reference36 articles.

1. Colloquium: Topological insulators

2. Comparative studies between the growth characteristics of Bi2Te3 thin films deposited on SiO2, Si(100) and Si(111)

3. Low-cost and nanoscale non-volatile memory concept for future silicon chips

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface conversion of single-crystal Bi2Se3 to β-In2Se3;Journal of Crystal Growth;2021-11

2. Surfactant-Induced Alterations of Epitaxial Orientation in β-In2S3 Layers on InP;Crystal Growth & Design;2021-10-15

3. Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions;Journal of Physics D: Applied Physics;2019-07-15

4. Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates;Journal of Solid State Chemistry;2019-02

5. Semicoherent growth of single-crystal β-In2S3 layers on InP(111) and InAs(111);CrystEngComm;2019

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