Determination of the Mn concentration in GaMnAs-Reference-Cited by-同舟云学术

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Determination of the Mn concentration in GaMnAs

Published:2005-03-01 Issue:5 Volume:20 Page:369-373
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhao L X,Campion R P,Fewster P F,Martin R W,Ber B Ya,Kovarsky A P,Staddon C R,Wang K Y,Edmonds K W,Foxon C T,Gallagher B L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Making Nonmagnetic Semiconductors Ferromagnetic

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. High-quality GaMnAs films grown with arsenic dimers

4. Defect-Induced Magnetic Structure in(Ga1−xMnx)As

5. Effect of the location of Mn sites in ferromagneticGa1−xMnxAson its Curie temperature

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of diluted magnetic $$\hbox {Ga}_{{1-x}}\hbox {Mn}_{{x}}$$ Ga 1 - x Mn x As–AlAs quantum wells grown on high-index GaAs planes;Bulletin of Materials Science;2017-10-31

2. Annealing effect on ferromagnetic properties, hole concentration and electronic band structure of GaMnAs epitaxial layers;Journal of Materials Science: Materials in Electronics;2017-08-21

3. Depth distribution of Mn in Mn doped GaAs using secondary ion mass spectrometry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-05

4. Self-assembly of compositionally modulated Ga1−xMnxAs multilayers during molecular beam epitaxy;Applied Physics Letters;2013-11-04

5. Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content;Physical Review B;2011-12-12

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