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Deep impurity levels in vanadium-doped Pb1−xMnxTe solid solutions

  • Published:2008-03-26 Issue:5 Volume:23 Page:055004
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Dobrovolsky A A,Artamkin A I,Dziawa P,Story T,Slyn'ko E I,Slyn'ko V E,Ryabova L I,Khokhlov D R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure of lead telluride-based alloys, doped with vanadium;Low Temperature Physics;2013-01

2. Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te;Semiconductors;2012-06

3. Galvanomagnetic properties and electronic structure of Pb1−x−ySnxVyTe under pressure;Semiconductor Science and Technology;2011-12-19

4. Pb1-xMnxTe: resistivity, mobility, carrier concentration, impedance;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011

5. Features of vanadium impurity states in lead telluride;Semiconductors;2010-12
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