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Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

  • Published:2009-08-25 Issue:9 Volume:24 Page:095024
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

AL-Omari A N,AL-Kofahi I K,Lear K L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application;Photonics;2024-02-26

2. Extrinsic Parasitics and Design Considerations on Modulation Bandwidth of 850-nm Vertical Cavity Surface Emitting Lasers;IEEE Transactions on Electron Devices;2022-09

3. High-speed 850 nm Vertical-cavity Surface-emitting Lasers with Multilayer Oxide Aperture;2022 IEEE 14th International Conference on Advanced Infocomm Technology (ICAIT);2022-07-08

4. Impedance characteristics of high speed VCSELs;2021 International Conference on Optical Instruments and Technology: Advanced Laser Technology and Applications;2022-07-08

5. Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers;Applied Sciences;2022-06-14
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