Damage enhancement in BF2+ion-implanted silicon-Reference-Cited by-同舟云学术

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Damage enhancement in BF2+ion-implanted silicon

Published:1992-05-01 Issue:5 Volume:7 Page:632-634
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lin Chenglu,Li Jinhua,Hemment P L F,Li Xiaogin,Yang Gengin,Zhou Zhuyao,Zou Shichang

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=5/a=002/pdf

Reference7 articles.

1. Energy density and time constant of heavy‐ion‐induced elastic‐collision spikes in solids

2. Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge

3. High density cascade effects

4. A study of molecular arsenic ion implantation in silicon

5. Damage created in silicon by BFn+ (1≤ n ≤ 3) and PFn+ (1⪯ n:≤ 5) implantations

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Grazing-angle RBS and channelling analysis of BF2+ implantation damage in silicon;Physica Status Solidi (a);1994-04-16

2. Influence of low energy ion bombardment on the properties of TiN films deposited by r.f. magnetron sputtering;Thin Solid Films;1994-01

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