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Band parameters and strain effects in ZnO and group-III nitrides

Published:2010-12-15 Issue:1 Volume:26 Page:014037
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yan Qimin,Rinke Patrick,Winkelnkemper M,Qteish A,Bimberg D,Scheffler Matthias,Van de Walle Chris G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference100 articles.

1. Prospects for LED lighting

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

4. Room-Temperature Blue Gallium Nitride Laser Diode

5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

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