Rapid thermal annealing effect on crystalline yttria-stabilized zirconia gate dielectrics
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
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1. Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions;Journal of Applied Physics;2019-03-21
2. Evidence for Chemicals Intermingling at Silicon/Titanium Oxide (TiO x ) Interface and Existence of Multiple Bonding States in Monolithic TiO x;Advanced Functional Materials;2018-05-18
3. Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films;Scientific Reports;2017-09-29
4. Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD;Materials Science in Semiconductor Processing;2016-12
5. INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS;Surface Review and Letters;2016-02-29
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