ZnSSe epilayers with extremely low defect density by the growth-temperature optimization-Reference-Cited by-同舟云学术

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ZnSSe epilayers with extremely low defect density by the growth-temperature optimization

Published:1997-06-01 Issue:6 Volume:12 Page:767-770
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Leem J Y,Son J S,Kim C S,Cho Y K,Noh S K,Park H S,Kim M D,Kim T I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Blue‐green laser diodes

2. Room temperature ZnSe/ZnCdSe bistable self‐electro‐optic effect device operating at 488 nm

3. MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

4. ZnMgSSe based laser diodes

5. First order distributed feedback operation in ZnSe based laser structures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relaxation of Misfit Strain of Chlorine-Doped n-Type ZnSxSe1-x Epilayers Grown on GaAs (100) Substrates;Journal of the Korean Physical Society;2008-07-15

2. Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy;Applied Physics Letters;1997-12

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