Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si-Reference-Cited by-同舟云学术

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Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Published:2003-09-17 Issue:12 Volume:18 Page:1015-1023
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ferro G,Camassel J,Juillaguet S,Balloud C,Polychroniadis E K,Stoemenos Y,Dazord J,Peyre H,Monteil Y,Rushworth S A,Smith L M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

2. High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines

3. State of the art of 3C-SiC/silicon on insulators

4. How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates

5. Growth at High Rates and Characterization of Bulk 3C-SiC Material

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1. Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane;Heliyon;2023-08

2. Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-09

3. Growth mechanism of porous 3C–SiC films prepared via laser chemical vapor deposition;Ceramics International;2020-07

4. Preparation and Characterization of SiC Nanoparticles for ATF-FCM;Solid State Phenomena;2018-08

5. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05

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