Chapman-Kolmogorov equation for Markov models of epitaxial growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Mathematical Physics,Statistical and Nonlinear Physics
Link
http://stacks.iop.org/0305-4470/22/i=11/a=004/pdf
Reference14 articles.
1. Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)
2. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
3. Epitaxial growth quality optimization by supercomputer
4. Influence of surface step density on reflection high-energy-electron diffraction specular intensity during epitaxial growth
5. Growth mechanism for molecular-beam epitaxy of group-IV semiconductors
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