Epitaxial growth and magnetic properties of Mn 5 Ge 3 /Ge and Mn 5 Ge 3 C x /Ge heterostructures for spintronic applications-Reference-Cited by-同舟云学术

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Epitaxial growth and magnetic properties of Mn 5 Ge 3 /Ge and Mn 5 Ge 3 C x /Ge heterostructures for spintronic applications

Published:2013-09-30 Issue:4 Volume:4 Page:043002
ISSN:2043-6262
Container-title:Advances in Natural Sciences: Nanoscience and Nanotechnology
language:
Short-container-title:Adv. Nat. Sci: Nanosci. Nanotechnol.

Author:

Thanh Vinh Le,Spiesser Aurélie,Dau Minh-Tuan,F Olive-Mendez Sion,A Michez Lisa,Petit Matthieu

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,General Materials Science

Link

https://iopscience.iop.org/article/10.1088/2043-6262/4/4/043002/pdf

Reference30 articles.

1. A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x

2. Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-AlloyFe3−xMnxSiEpilayers Grown on Ge(111)

3. Epitaxial ferromagnetic Mn5Ge3 on Ge(111)

4. Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection

5. Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge(111) by solid phase epitaxy

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3. Sublayer-Enhanced Growth of Highly Ordered Mn5Ge3 Thin Film on Si(111);Nanomaterials;2022-12-07

4. Influence of fabrication parameters on the magnetic and structural properties of Mn₅Ge₃;Semiconductor Science and Technology;2022-04-22

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