Electrical and optical properties of GaN/Al2O3interfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=386/pdf
Reference16 articles.
1. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
2. Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
3. Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy
4. Influence of growth rate on the structure of thick GaN layers grown by HVPE
5. Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces
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1. The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT;Applied Physics Letters;2022-04-25
2. Comparative analysis of light trapping GaN nanohole and nanorod arrays for UV detectors;Journal of Nanoparticle Research;2020-08
3. The effect of geometry parameters on light harvesting performance of GaN nanostructure arrays—a numerical investigation and simulation;Materials Research Express;2019-12-09
4. Direct observation of an electrically degenerate interface layer in a GaN/sapphire heterostructure;Nanoscale;2019
5. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure;Journal of Alloys and Compounds;2016-06
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