Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics-Reference-Cited by-同舟云学术

Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

Published:2011-08-03 Issue:33 Volume:23 Page:334203
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Hohmann Mareike V,Ágoston Péter,Wachau André,Bayer Thorsten J M,Brötz Joachim,Albe Karsten,Klein Andreas

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/23/i=33/a=334203/pdf

Reference62 articles.

1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

2. Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

3. Recent progress of molecular organic electroluminescent materials and devices

4. OLED manufacturing for large area lighting applications

5. Oxide Contacts in Organic Photovoltaics: Characterization and Control of Near-Surface Composition in Indium−Tin Oxide (ITO) Electrodes

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