Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3topological insulator layers-Reference-Cited by-同舟云学术

Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3topological insulator layers

Published:2016-10-17 Issue:49 Volume:28 Page:495501
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Weyrich C,Drögeler M,Kampmeier J,Eschbach M,Mussler G,Merzenich T,Stoica T,Batov I E,Schubert J,Plucinski L,Beschoten B,Schneider C M,Stampfer C,Grützmacher D,Schäpers Th

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/28/i=49/a=495501/pdf

Reference56 articles.

1. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

2. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

3. Transport in three-dimensional topological insulators: Theory and experiment

4. Three-Dimensional Topological Insulators

5. Topological insulators and superconductors

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