Valence band structure of the Si(331)-(12 × 1) surface reconstruction-Reference-Cited by-同舟云学术

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Valence band structure of the Si(331)-(12 × 1) surface reconstruction

Published:2011-03-14 Issue:13 Volume:23 Page:135003
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Battaglia Corsin,Fabian Schwier Eike,Monney Claude,Didiot Clément,Mariotti Nicolas,Gaál-Nagy Katalin,Onida Giovanni,Gunnar Garnier Michael,Aebi Philipp

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/23/i=13/a=135003/pdf

Reference20 articles.

1. Surface-state band structure of the Si(100)2×1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces

2. Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy

3. Origin of a surface state above the Fermi level on Ge(001) and Si(001) studied by temperature-dependent ARPES and LEED

4. Determination of the Fermi-level pinning position at Si(111) surfaces

5. Low-temperature photoemission study of the surface electronic structure ofSi(111)7×7

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic and electronic structure of the Si(331)-(12 × 1) surface;The Journal of Chemical Physics;2018-11-28

2. Electronic structure of Si(110)-(16×2) studied by scanning tunneling spectroscopy and density functional theory;Physical Review B;2011-09-22

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