Activation mechanisms in sodium-doped silicon MOSFETs
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/19/i=22/a=226216/pdf
Reference37 articles.
1. Deposition and removal of sodium contamination on silicon wafers
2. Transport Properties of Electrons in Inverted Silicon Surfaces
3. Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers
4. Density of states of the one-dimensional electron gas: Impurity levels, impurity bands, and the band tail
5. On the Mechanism of Impurity Band Conduction in Semiconductors
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures;Journal of Semiconductors;2021-05-01
2. Cleaning Transferred Graphene for Optimization of Device Performance;Advanced Materials Interfaces;2019-04-30
3. The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact;International Conference on Micro- and Nano-Electronics 2018;2019-03-15
4. On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect;Semiconductors;2019-01
5. Sodium diffusion in 4H-SiC;APL Materials;2014-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3